Ufs 3.1 Pinout Direct

Unlike its predecessor, eMMC (which uses a parallel interface), UFS uses a serial differential interface similar to PCIe or SATA. A typical UFS 3.1 chip comes in a BGA-153 package (Ball Grid Array, 153 balls), though not all balls are used. The essential pins fall into four functional groups:

| Group | Key Pins | Purpose | |-------|----------|---------| | Power Supply | VCC (3.3V), VCCQ (1.2V/1.8V), VCCQ2 (1.8V) | Core flash memory, controller logic, and I/O interface power | | High-Speed Data | UFS_RX_P, UFS_RX_N, UFS_TX_P, UFS_TX_N | Differential receive/transmit lanes (M-PHY gear 4) | | Control & Clock | REF_CLK (26 MHz typical), RST_n | Reference clock and hardware reset | | Auxiliary & Strapping | Boot_LD, Boot_EN, RPMB_Key, CMD (legacy), VDDi | Boot mode selection, security, and voltage configuration |

Crucial insight: UFS 3.1 does not use a traditional command (CMD) line like eMMC. Instead, commands are embedded in the data stream using the UniPro protocol stack. The separate "CMD" ball on some pinout diagrams is often a strapping pin or unused.

These pins manage power states, reset, and boot flows.

   1   2   3   4   5   6   7   8   9  10 11 12 13
A  VCC VCC NC  REF RST NC  NC  NC  NC  NC NC NC NC
               _CLK _N
B  VCC VCC C/D VSS VSS NC  NC  NC  NC  NC NC NC NC
C  VCC VCC D0_ D0_ VSS NC  NC  NC  NC  NC NC NC NC
        Q    Q  RX  TX
D  VCC VCC D1_ D1_ VSS NC  NC  NC  NC  NC NC NC NC
        Q    Q  RX  TX

(NC = No Connect / Reserved)

For a full 153-ball diagram, request the vendor’s mechanical drawing or refer to JEDEC Standard JESD220-3 (UFS 3.1).

Universal Flash Storage (UFS) 3.1 is a high-performance storage interface standard commonly used in modern smartphones and automotive systems to provide high-speed data transfer and improved power efficiency. Common UFS 3.1 Pinout Configurations

UFS 3.1 chips typically use a Ball Grid Array (BGA) package, with the most common being BGA 153 and BGA 254. 1. BGA 153 Pinout (Standard Mobile/Embedded)

UFS 3.1 | Universal Flash Storage | Samsung Semiconductor Global

UFS 3.1 | Universal Flash Storage | Samsung Semiconductor Global. samsung.com

Universal Flash Storage (UFS) 3.1: Technical Architecture and Pinout Analysis ufs 3.1 pinout

Universal Flash Storage (UFS) 3.1 is an advanced storage standard developed by the JEDEC Solid State Technology Association to meet the high-bandwidth and low-latency demands of 5G smartphones, automotive systems, and IoT devices. By utilizing the MIPI M-PHY physical layer and UniPro link layer, UFS 3.1 achieves sequential read speeds of approximately 2100 MB/s, representing a significant performance leap over older standards like eMMC. 1. Physical Interface: The BGA153 Footprint

The standard physical package for UFS 3.1 is the 153-ball Fine-pitch Ball Grid Array (FBGA). While this 153-ball footprint is physically similar to the older eMMC BGA153, the internal pin assignments and electrical signaling are entirely different and incompatible. Samsung 512GB UFS 3.1 - Upgrade Guide & Performance 2026

standard (JESD220E) typically uses a 153-ball BGA (Ball Grid Array) package, similar to previous UFS generations like 2.1 and 3.0, but with updated electrical specifications for higher speeds. Key Signals and Power Rails

UFS 3.1 utilizes a differential serial interface (M-PHY) with up to two lanes for data transfer. Mouser Electronics Data Lanes (Differential Pairs): DIN_t / DIN_c: Input data lanes (Host to Device). DOUT_t / DOUT_c: Output data lanes (Device to Host). Power Supplies: VCC (2.7V – 3.6V): Main power for the NAND flash media. VCCQ (1.14V – 1.26V): Power for the UFS controller and I/O interface. VCCQ2 (1.7V – 1.95V):

Typically used for the M-PHY layer or other low-voltage internal modules. Control Signals:

Reference clock input (square wave, single-ended), critical for High-Speed (HS) modes. Hardware reset signal (active low). Mouser Electronics Pin Assignment Groups (153-Ball BGA)

While the full 153-ball map contains many ground (GND) and "No Connect" (NC) pins, the critical functional pins are clustered as follows: Core Voltage

Typically multiple pins (e.g., A3, B3, C3) for current capacity. I/O Voltage Low voltage rail (1.2V typical). PHY Voltage Mid-range voltage rail (1.8V typical). Transmit Pairs

Differential output signals from host view (DIN for device). Receive Pairs

Differential input signals from host view (DOUT for device). Reference Clock Necessary for HS-G3 and HS-G4 modes. System reset pin. In-System Programming (ISP) Points

For data recovery or forensic tasks, "ISP" refers to soldering directly to specific test points on a PCB rather than the full BGA grid. Common ISP connections for UFS 3.1 include: VCC & VCCQ TX0_P/N & RX0_P/N (Data Lane 0) Some UFS 3.1 implementations require a 10-ohm resistor

for a specific package size, such as the 11.5mm x 13mm variant?

JEDEC Publishes Update to Universal Flash Storage (UFS) Standard 30 Jan 2020 —

UFS 3.1 introduces new features intended to help maximize device performance while minimizing power usage. 153-Ball Automotive UFS Memory - Mouser Electronics

Universal flash storage (UFS) controller and NAND. Differential I/O pins. – 2 lanes supported. – High speed: Gear 1/2/3 supported. Mouser Electronics

UFS 3.1协议分析(第六章) -- UFS电气信号 - CSDN博客 22 Sept 2021 —

UFS信号 UFS供电复位参考时钟. UFS有三个供电电压,分别是VCC、VCCQ、VCCQ2。 ufs3.1中规定的电压值范围为: VCC从300mV上升到2.4V / 2.7V时间为35ms. CSDN博客 UNIVERSAL FLASH STORAGE (UFS 3.1)

* Deep Sleep(mA) VCCQ(1.2V) VCC(2.5V) VCCQ(1.2V) 537. 124. 439. 0.36. 0.05. 0.15. 0.06. „Mouser Electronics“ Lietuva Samsung UFS Card 7 Apr 2016 —

UFS 3.1 (Universal Flash Storage) is a high-speed, serial interface designed for mobile systems like smartphones and tablets. Unlike older parallel interfaces like eMMC, the UFS 3.1 pinout utilizes Low Voltage Differential Signaling (LVDS) to achieve high-performance full-duplex operation, allowing the device to read and write simultaneously. UFS 3.1 Pin Configuration Overview

The most common physical package for UFS 3.1 is the 153-ball FBGA (Fine-pitch Ball Grid Array), measuring approximately 11.5mm x 13.0mm. The reduced pin count compared to eMMC simplifies PCB routing while enabling much higher bandwidth.

According to technical specifications from Arasan Chip Systems and Kingston , the pinout is categorized into high-speed data lanes, power supply lines, and control signals. High-Speed Differential Lanes (M-PHY)

UFS 3.1 relies on the MIPI M-PHY physical layer, which uses differential pairs for data transmission.

TX_P / TX_N (Transmit): Differential data lanes for sending information from the host to the storage device. (NC = No Connect / Reserved)

RX_P / RX_N (Receive): Differential data lanes for receiving data from the storage device to the host.

Lanes: UFS 3.1 typically supports a 2-lane configuration (2 TX and 2 RX pairs), doubling the bandwidth compared to single-lane setups. Power Supply Pins

Maintaining stable power is critical for UFS 3.1 performance, especially with features like "Write Booster".

VCC: The main power supply for the NAND flash memory, typically ranging from 2.4V to 2.7V.

VCCQ: Power supply for the controller and I/O interface, typically 1.14V to 1.26V (nominal 1.2V).

GND / VSS: Ground pins used for power return and signal shielding. Clock and Control Signals

REF_CLK (Reference Clock): Provides the base frequency for the M-PHY. Modern UFS 3.1 devices like those from Samsung Semiconductor require a precise reference clock to transition into high-speed modes.

RST_N (Hardware Reset): A low-active signal used to hard-reset the UFS device. UFS 3.1 vs. eMMC Pinout

UFS 3.1 | Universal Flash Storage | Samsung Semiconductor Global

Bolstered by JEDEC standards, the UFS 3.1 offers high-performing storage with serious speed. It's thanks in part to Write Booster, samsung.com Samsung UFS Card

In the context of hardware repair and data forensics, the most "helpful feature" of a UFS 3.1 pinout is its support for In-System Programming (ISP)

. This allows technicians to connect directly to the storage chip's data lanes without removing it from the motherboard, significantly reducing the risk of heat damage to the chip or surrounding components. Forensic Focus Key Helpful Features of UFS 3.1 Pinouts Samsung 512GB UFS 3.1 - Upgrade Guide & Performance 2026

If you are designing a circuit, debugging a non-functional phone, or attempting data recovery, focus on these five pins first:

If C/D ball is high, device boots from logical unit 0 (normal). If low, enters pre-soldering test mode (do not use in product).