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For years, people believed CMOS was too noisy for RF. Voinigescu disproves this by modeling gate-induced noise and substrate noise with precision. The PDF contains tables comparing noise figure (NF) between 16nm FinFETs and 130nm SiGe HBTs—data critical for a system architect.

While not the full PDF, Google Books offers a substantial preview (~20% of the book). This is useful for checking specific equations or references before buying.

To truly master the content of High-Frequency Integrated Circuits, follow this study plan using the book:

This is the core of the book, covering the design of individual stages.

Uses the Lesson model but adds numerical simulations of cyclostationary noise. His analysis of push-push oscillators (for doubling frequency) and Colpitts at mm-wave (why it outperforms cross-coupled) is rare in other texts.